Dr. Piero Pianetta's research is directed towards understanding how the atomic and electronic structure of semiconductor interfaces impacts device technology. His research includes the development of new analytical tools for these studies based on the use of synchrotron radiation. Recent projects include the development of ultrasensitive methods to analyze trace impurities on the surface of silicon wafers at levels as low as 1e-6 monolayer (~1e8 atoms/cm2) and the use of various photoelectron spectroscopies (X-ray photoemission, NEXAFS, X-ray standing waves and photoelectron diffraction) to determine the bonding and atomic structure at the interface between silicon and different passivating layers.